A novel method for preparation of pure Bi2SiO5 crystals

Abstract Pure Bi 2 SiO 5 crystals were firstly prepared by a novel method of melt-cooling process with Bi 2 O 3 and SiO 2 as starting materials. In this study, the preparation and properties of the samples were characterized by thermo gravimetric (TG), differential scanning calorimeter (DSC), field-emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). The results showed several endothermic valleys at 579.6 °C, 744.3 °C, 829.3 °C and 879.2 °C during heating process; and a distinct exothermic peak at 805.3 °C during the melt cooling process. XRD and SEM images revealed highly-ordered lamellar pure Bi 2 SiO 5 crystals with coarse grains can be achieved by 2 h heating at 805.3 °C.