High-speed, high-current-gain p-n-p InP/InGaAs heterojunction bipolar transistors

p-n-p InP/InGaAs heterojunction bipolar transistors (HBTs) are reported for the first time. The transistors, grown by metal organic molecular beam epitaxy (MOMBE), exhibited maximum DC current gain values up to 420 for a base doping level of 4*10/sup 18/ cm/sup -3/. Small-signal measurements on self-aligned transistors with 3- mu m*8- mu m emitter area indicated the unity gain cutoff frequency value of 10.5 GHz and the inferred maximum frequency of oscillation of 25 GHz. The results clearly demonstrate the feasibility of complementary integrated circuits in the InP material system. >