A method for controlling an epitaxial growth method in an epitaxy reactor, and controller for epitaxial growth Datenanlysemodul

A method for controlling a growth process in an epitaxy reactor, wherein the method comprises: performing a first pass of the epitaxial growth method and controlling the temperature of the epitaxial growth method during the first pass through a temperature measuring device which determines the temperature based on a first thermocouple deviation parameter value; the optimization of the thermocouple deviation parameters for a second pass through the following steps: - the measurement of an actual output parameter value of the growth process of the first pass; - the establishment of a modeled output parameter value as a function of the actual output parameter value and a second thermocouple deviation parameter value; - determining a distance between a target output parameter value and the modeled output parameter value; - the determination of the second thermocouple deviation value as a thermocouple deviation value that provides the minimum distance between the modeled output parameter value and the target parameter value; performing a second pass of the epitaxial growth method and controlling the temperature of the epitaxial growth method during the second pass through the temperature measuring device, the temperature based on the second thermocouple deviation parameter value ...