Transistor aging and reliability in 14nm tri-gate technology
2015
This paper details the transistor aging and gate oxide reliability of Intel's 14nm process technology. This technology introduces Intel's 2 nd generation tri-gate transistor and the 4 th generation of high-κ dielectrics and metal-gate electrodes. The reliability metrics reported here highlight reliability gains attained through transistor optimizations as well as intrinsic challenges from device scaling.
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