Surface pattern recording in Sb2Se3 thin films

Abstract Results on the modification of Sb 2 Se 3 thin film surface topology by irradiation followed by wet-etching are given. Comparison of study results revealed the possible role of purely electronic and thermal processes in the relief formation. The latter is supposed to be connected with radiation-induced defect creation, free volume increase under the increased fluidity conditions as well as with the possible additional influence of electrostatic forces and stress. Changes in surface characteristics are presented and potential applications of this treatment are discussed.