All Quantum Simulation of Ultrathin SOI MOSFETs

The procedure for all-quantum 3D simulation of a nanometer scale silicon-on-insulator MOSFET is proposed. It is based on the Buttiker- Landauer approach realized via a self-consistent solution of the Schrodinger and Poisson equations. The stabilization of the numerical solution of the Schrodinger equation is achieved by a finite wave-guide mode presentation of a wave function. We also propose a method to avoid the need for numerical solution of Schrodinger equation for most of the particles (waves) moving from contacts CHECK but those which surmount the self- consistent barrier and contribute to current. This approach brings greater speed of the simulation program.