Two lumped-charge based power MOSFET models

This paper presents models for two DMOS devices, the low-voltage lateral diffused MOSFET for IC applications (LDMOS) and the discrete vertical diffused power MOSFET (VDMOS), both developed using the lumped-charge methodology. The LDMOS model gives better performance than the BSIM3 which is the industry-standard model for the lateral diffused MOSFET. The VDMOS model is an improved version of the Budihardjo-Lauritzen model.