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Epitaxial MoS 2 /GaN structures to enable vertical 2D/3D semiconductor heterostructure devices
Epitaxial MoS 2 /GaN structures to enable vertical 2D/3D semiconductor heterostructure devices
2016
Dmitry Ruzmetov
Kehao Zhang
Gheorghe Stan
Berç Kalanyan
Sarah M. Eichfeld
Robert A. Burke
Pankaj B. Shah
Terrance O'Regan
Frank Crowne
A. G. Birdwell
Joshua A. Robinson
Albert V. Davydov
Tony Ivanov
Keywords:
Semiconductor
Optoelectronics
Heterojunction
Epitaxy
Materials science
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