High-Performance Nonvolatile Organic Transistor Memory Using Quantum Dots-Based Floating Gate

A novel nonvolatile floating-gate transistor memory device using CdSe@ZnS quantum dots (QDs) embedded the insulating polymer as a charge-storage layer along with the rational design of device structure is presented. The core–shell structure CdSe@ZnS QDs can efficiently trap both holes and electrons under the applied writing/erasing operations, resulting in a considerable threshold voltage shifts ( $\Delta {V}_{{{\text {TH}}}})$ over 50 V and forming high-conductance (ON) and low-conductance (OFF) states at a gate voltage of 0 V. The value of threshold voltage shift is controlled by writing and erasing voltages, regardless with source–drain voltages. Furthermore, it exhibits a long retention time (the $\Delta V_{{{\text {TH}}}}$ can maintain 76% at 10 8 s) and outstanding endurance characteristics (>500 cycles), demonstrating extraordinary stable and reliable memory property. Moreover, a thin layer of Al 2 O 3 was introduced as tunneling dielectric layer which is essential for the high-performance floating-gate transistor memory device. The nonvolatile organic transistor memory devices using QDs-based floating gate show great potential application for high-performance organic memory devices.