Hybridization of GaAs, AlAs and (Al, Ga)As with carbon nanotubes by molecular beam epitaxy

The result on molecular beam epitaxy of GaAs and AlGaAs using carbon nanotubes (CNTs) as a crystalline seed is reported. At the growth temperature TG ≥ 600 °C, GaAs wraps around CNTs forming wire-like configuration, while Al composites form dot-like formation. At TG < 550 °C, both GaAs and AlGaAs form dot-like droplets along CNTs. Raman and XRD show the dots and wires of III-arsenide on CNTs have well-defined crystalline structure. And, the results also are indicative that tangential phonon mode and inter-atomic spacing of CNTs are affected by the interfacing of CNTs and III-V's. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)