TDDB Reliability in Gate-All-Around Nanosheet

Time dependent dielectric breakdown (TDDB) reliability is studied on interfacial layer (IL)/high-K gate stack of Gate-All-Around Nanosheet (GAA-NS) N- and P-type Field Effect Transistors (FETs) with volume-less multiple threshold voltage (multi-Vt) integration scheme enabled by the dual dipoles (n-dipole and p-dipole). We report for the first time Key TDDB Modeling parameters: voltage acceleration exponent (VAE), Weibull slope ( $\beta$ ), and activation energy (E a ) and show robust TDDB reliability in multi-Vt NS transistors enabled by different dipoles.