PZT/YBCO integration and characterization of a three terminal device

Abstract A ferroelectric-superconducting three terminal device (FSuFET), using high Tc superconducting YBa2Cu3O7-x films as the base layer and ferroelectric Pb(ZrxTi1–x)O3 (PZT) films as the gate layer, has been fabricated and studied. The device is made of the epitaxial PZT/YBCO heterostructures, which were deposited on MgO(100) or LaAlO3(100) substrates by laser ablation. The crystal structure and compositions of both PZT and YBCO thin films, and the interface between PZT and YBCO have been defined. The polarization and dielectric constant of the PZT films in the structure, and the transient behavior and high frequency response of the device have been determined in the temperature range of 30K to 300K.