Ge and III/V devices for advanced CMOS

The use of Ge and III/V materials for future CMOS applications is investigated. Good passivation of the Ge surface can be obtained by either GeO 2 or Si passivation. Short channel Ge pMOS devices with low EOT are fabricated using Si passivation at 350 and 500°C. The passivation of III/V materials is a very challenging topic. Some critical issues and passivation schemes are discussed.