Radioactive Thorium-doping Effects on the Spectral and Electrical Features of Th- Doped 212-Vanadate Ceramics

The compounds with general formula Bi 2 SrV 2-x Th x O 9 , where (x= 0.05, 0.1, 0.2, 0.3, 0.6) were carefully synthesized and processed by using mixed techniques solid state reaction and solution  routes with sintering temperature at 880 o C for 20 hrs. XRD – analysis of the prepared samples proved that thorium (IV)-dopant can substitute successfully until x = 0.55 mole on the Bi-layered perovskite crystal structure without damaging the original perovskite structure . It was observed that  Th - dopings have slight to moderate effects on both ESR-signals and conduction mechanism of  Th-doped Bi-Sr-V-O regime. Electrical measurements indicated that the energy gap E g and number of electrons in conduction band N cb increase as the ratio of Th doping increases from x = 0.05 till x = 0.6 mole respectively due to the increasing of paramagnetic character of thorium than vanadium .