Old Web
English
Sign In
Acemap
>
Paper
>
CHARACTERIZATION AND REMOVAL OF SILICON SURFACE RESIDUE RESULTING FROM CHF3/C2F6 REACTIVE ION ETCHING
CHARACTERIZATION AND REMOVAL OF SILICON SURFACE RESIDUE RESULTING FROM CHF3/C2F6 REACTIVE ION ETCHING
1994
Ki Cho
Kh Kwon
Oj Kwon
Jl Lee
Hh Park
Sc Park
Ks Suh
Keywords:
Residue (complex analysis)
Reactive-ion etching
Chemical engineering
characterization
Materials science
Silicon
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]