Substrate-quality ternary III-V single crystals for II-VI device applications: growth and characterization

We report the liquid encapsulated Czochralski growth and characterization of large, substrate quality single crystal Ga1-xInxAs, 0 < x < 0.10, in excess of 50 millimeters in diameter and weighing 1000 grams. This unique ability to grow large single crystals of ternary III-V compound semiconductors permits realization of the concept of substrate engineering for both homo- and heteroepitaxial applications. One area of particular interest and importance is the development of short visible wavelength (blue) lasers. Wafers with x equals 0.038 have been used for lattice matched MBE growth of ZnSe and ZnCdSe epilayers for blue emitter applications. Low temperature photoluminescence, WDX and double crystal x-ray diffraction (rocking curve) measurements have been utilized to confirm compositional uniformity and crystal quality. Characterization results for both substrate and epitaxial layer are discussed.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.