Narrow line crystallization of rubrene thin film enhanced by Yb interfacial layer for single crystal OFET application

Rubrene is one of the most promising organic semiconductor for OFET application. The high hole mobility such 1.21 cm 2 /(Vs) has been reported for the OFET with rubrene thin film evaporated on SiO 2 gate insulator for bottom-g; geometry [1]. However, the crystallization of rubrene thin film on SiO 2 is difficult to be controlled. A self-assembled monolayer (SAM) scheme is often used to realize the good crystallinigy of organic semiconductor films. However, it 1 an issue in terms of the uniformity which would be an issue of large scale integration of OFETs. In this paper, we ha investigated the narrow line crystallization of rubrene thin film utilizing Yb interfacial layer, which is able to be in-s deposited in a same chamber for rubrene deposition, for the first time.