Producible GaAs-based MOVPE-grown vertical-cavity top-surface emitting lasers with record performance

The authors present state-of-the-art performance obtained from producible, 850 nm, current-guided GaAs/AlGaAs, top-emitting vertical-cavity surface-emitting lasers (VCSELs). Record CW room-temperature device performance includes threshold voltages V/sub th/=1.55 V, submilliamp threshold currents I/sub th/=0.68 mA, unbonded CW output power P/sub cw/=59 mW, total wallplug efficiencies of eta /sub np/=28% and CW lasing to T/sub cw/=200 degrees C. These results were obtained from the same fabrication processes and similar epigrowth designs, which exhibited 99.8% device yield across a 3"-diameter metal organic vapour phase epitaxy (MOVPE)-grown wafer. >