Temperature mapping using single wavelength pyrometry during epitaxial growth
2011
Epitaxial substrate temperature remains one of the most important parameters to control during deposition for the production of heterostructures with a high level of quality and uniformity. To this end, full wafer temperature measurement offers a powerful way to obtain information on the epitaxial process. This article presents a simple method to obtain in situ temperature mappings over a 4 in. wafer using a low-cost commercially available CCD camera as a single wavelength pyrometer in the near-infrared wavelength range. By correlating this pyrometric measurement with an independent temperature measurement, the emissivity at a single point can be extracted during epitaxial growth and is then used to correct temperature mappings under certain conditions.
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