Polysilane-Inserted Methylammonium Lead Iodide Perovskite Solar Cells Doped with Formamidinium and Potassium

Polysilane-inserted CH3NH3PbI3 perovskite photovoltaic devices combined with potassium and formamidinium iodides were fabricated and characterized. Decaphenylcyclopentasilane layers were inserted at the perovskite/hole transport interface and annealed across a temperature range of 180–220 °C. These polysilane-coated cells prevented PbI2 formation, and the conversion efficiencies were improved over extended periods of time.