SIMULATION OF THE PERFORMANCE OF A 5-JUNCTION ARRAY FOR 780-950GHz

The performance of a five-junction (Nb/A10xNb) array is characterized in the frequency range of 780-950GHz for different wiring and ground layers of the thin-film tnicrostrip lines of the junction tuning inductance and the associated impedance transformer. Three kinds of thin films (i.e., Nb, Al, and NbTiN) are taken for this investigation. The individual SIS junctions of the five-junction array have an area of 1 ,tni 2 and a critical current density of 10kA/cm 2 . The performance of parallel-connected twin junctions, which have the same junction parameters as those of the five-junction array, is also studied for comparison.