ANALYTICAL APPROXIMATIONS OF THE NIEL IN SEMICONDUCTOR DETECTORS FOR HEP ê

An important tool for the development of devices (detectors, cell solar, electronic circuit components) for high energy accelerator facilities or for space utilization, where new missions and experiments will be operated, is to find new materials with harder radiation properties. The radiation fields in these environments are extremely complex and the tests of the behaviour of different materials and devices for concrete situations are difficult to realise and very expensive. Thus, scaling of degradation effects would represent a useful tool and it is the main aim of the present contribution. Some analytical expressions for NIEL that suggest possible scaling formula are given. PACS: 61.80.Az Theory and models of radiation effects.