Characterisation of the charge collection properties in a segmented planar HPGe detector

Abstract Segmented germanium semiconductor detectors provide excellent γ -ray spectroscopic information whilst also being sensitive to the position of interactions within their active volume. Understanding the detector response to γ -ray interactions throughout its volume is required for interpreting the signal output. This work is the first assessment of the response and charge collection properties of an electrically-cooled Mirion Technologies-manufactured planar HPGe detector with boron implanted p + and amorphous germanium based n + strip contacts. The signal response of the detector as a function of γ -ray interaction position has been characterised by performing collimated beam scans with 59.5 keV and 661.6 keV γ -rays. A database of average signals, generated through the detector volume and across the detector surfaces, has been produced. A map of parameterised rise time response through depth has been generated and used to apply pulse shape analysis techniques, improving the position resolution within the detector.