Exploring metastable defect behavior in solution-processed antimony doped CIGS thin film solar cells

This study investigates the metastable defect behavior from temperature dependent current density-voltage (JVT) and capacitance spectroscopy measurements in solution-processed antimony (Sb) doped CIGS thin film solar cells. From the V oc (T) analysis, the main recombination mechanism is found to be Schottky-Read-Hall recombination in the bulk. A detailed study of the carrier concentration, defect density and energy level defects was performed using capacitance spectroscopy. Admittance spectroscopy measurements revealed an admittance step at low temperatures with an activation energy of 42 meV.