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Optical investigation of MBE grown Si-doped Al x Ga 1− x N as a function of nominal Al mole fraction up to 0.5
Optical investigation of MBE grown Si-doped Al x Ga 1− x N as a function of nominal Al mole fraction up to 0.5
2001
J.L McFall
R. L. Hengehold
Y. K. Yeo
J. E. Van Nostrand
Adam William Saxler
Keywords:
Crystallography
Molecular beam epitaxy
Mole fraction
X-ray crystallography
Semiconductor device
Doping
Inorganic chemistry
Band gap
Chemistry
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