High efficiency heterojunction solar cells on n-type kerfless mono crystalline silicon wafers by epitaxial growth

We present a heterojunction (HJ) solar cell on n-type epitaxially grown kerfless crystalline-silicon (c-Si) with a conversion efficiency of 22.5%. The total cell area is 243.4 cm2. The cell has a short-circuit current density of 38.6 mA/cm2, an open-circuit voltage of 735 mV, and a fill factor of 0.791. The key advantages and technological tasks of epitaxial wafers for HJ solar cells are discussed, in comparison with conventional n-type Czockralski c-Si wafers. The combination of HJ and kerfless technology can lead to high conversion efficiency with a potential at low cost.