Carrier screening effects in photoluminescence spectra of InGaAsP'InP multiple quantum well photovoltaic structures

Room temperature photoluminescence of p–i–n InGaAsP/InP multiple quantum well heterostructures was investigated under different excitation intensities. Photoluminescence spectra show the effect of phase space filling in quantum wells with increasing excitation density. Bias dependence of photoluminescence clearly demonstrates field screening that occurs inside the undoped layer. Device simulation is used to explain the observed phenomena.