Single Crystalline GaN Epitaxial Layer Prepared on Nano-Patterned Si(001) Substrate

The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO 2 recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95% using the nano-patterned Ski(001) substrate, as compared to the conventional un-pattemed Si(111) substrate.