Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate

In this work, we investigate the effect of Ge amorphization and low temperature regrowth on the activation and deactivation of boron in the source and drain region, transistor channel and polycrystalline gate. It is concluded that amorphization of silicon offers important advantages for boron activation enhancement and junction depth control. Simultaneously it introduces problems related to the channel deactivation and partially activated poly.