Inverted-Type InGaAs Metal-Oxide-Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm

Inverted-type In0.51Al0.49As/In0.53Ga0.47As metal–oxide–semiconductor high-electron-mobility transistor grown by metal organic chemical vapor deposition on a Si substrate was demonstrated. 8 nm atomic-layer-deposited Al2O3 was used as gate dielectric. N++ InGaAs with an electron density of 4.5×1019 cm-3 was selectively regrown in the source/drain regions to reduce parasitic resistance while eliminating the conventional gate recess etching. 130-nm channel-length devices have exhibited a drain current up to 2.03 A/mm at Vds=0.6 V and an ultralow on-resistance of 163 Ω µm. An effective mobility of 2975 cm2 V-1 s-1 was also extracted, indicating the high-quality epitaxial growth by metal organic chemical vapor deposition.