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Low-Defect III-N Devices By Remote Epitaxial GaN: FY19 Advanced Materials and Processes Line-Supported Program
Low-Defect III-N Devices By Remote Epitaxial GaN: FY19 Advanced Materials and Processes Line-Supported Program
2020
R. J. Molnar
T. Osadchy
J. Kim
W. Kong
Keywords:
Electron mobility
Epitaxy
Graphene
advanced materials
Compound semiconductor
Optoelectronics
optical materials
Surface finishing
Dislocation
Materials science
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