Design and Experimental Validation of a Wire-bond-less 10 kV SiC MOSFET Power Module

Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium- and high-voltage systems due to their high-speed switching and lower ON-state losses. However, the present power module packages are limiting the performance of these unique switches. The objective of this article is to push the boundaries of high-density, high-speed, 10-kV power module packaging. The proposed package addresses the well-known electromagnetic and thermal challenges, as well as the more recent and prominent electrostatic and electromagnetic interference (EMI) issues associated with high-speed, 10-kV devices. The module achieves low and balanced parasitic inductances, resulting in a record switching speed of 250 V/ns with negligible ringing and voltage overshoot. An integrated screen reduces the common-mode (CM) current that is generated by these fast voltage transients by ten times. This screen connection simultaneously increases the partial discharge inception voltage (PDIV) by more than 50%. A compact, medium-voltage termination and system interface design is also proposed in this article. With the integrated jet-impingement cooler, the power module prototype achieves a power density of 4 W/mm3. This article presents the design, prototyping, and testing of this optimized package for 10-kV SiC MOSFETs.