Method for forming epitaxial layer

A method for forming an epitaxial layer according to the present invention includes a step of forming multiple first insulating patterns which are separated from each other in a substrate, a step of forming first epitaxial patterns on the first insulating patterns, a step of forming second insulating patterns touching the first insulating patterns in the substrate between the first insulating patterns, and a step of forming a single epitaxial layer which includes the first epitaxial patterns and second epitaxial patterns on the first insulating patterns and the second insulating patterns, by forming the second epitaxial patterns touching the first epitaxial patterns between the first epitaxial patterns on the second insulating patterns.