Growth of β-Ga2O3 nanocolumns crossing perpendicularly each other on MgO (100) surface

Abstract β-Ga 2 O 3 nanocolumns straightened and crossed perpendicularly each other were deposited on MgO (1 0 0) substrate by vapor phase transport method. Growth of the nanocolumns was examined at steps of 1000, 1050, and 1200  ° C in elevation of source-boat temperature. We have drawn out the substrate from deposition-tube at each source-boat temperatures of 1000, 1050, and 1200 °C. Scanning electron microscopy of the sample with source-boat temperature of 1200 °C demonstrated that the straightened and elongated nanocolumns are crossing perpendicularly each other. Typical lengths of the nanocolumns were in the range of several hundreds nanometers below 1050 °C, and those of 1200 °C were in the range of ten to fifteen hundreds nanometers. Diameters of the nanocolumns stayed in the range of few hundreds nanometers, notwithstanding variation of the source temperature. X-ray diffraction and transmission electron microscopy with energy dispersive X-ray spectroscopy revealed that the nanocolumns are monoclinic β-Ga 2 O 3 crystal, and the (4 0 0) plane of β-Ga 2 O 3 nanocolumns is parallel to the (1 0 0) plane of MgO substrate.