Dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors

Straightforward and successful dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors (FETs) are reported, in which the DEP is used to align and manipulate ZnO nanowires. The DEP-prepared multi-channel ZnO nanowire FETs can manage on-current exceeding ~ 1 muA at low bias voltages.