Negative magnetoresistance in Mn-doped p-CdSb under pressure

Abstract We report on the characterization and magnetotransport measurements as a function of applied pressure for Mn-doped CdSb magnetic semiconductor. A pressure-induced negative magnetoresistance (MR) is observed in the polycrystalline ingots of p -Cd 1- x Mn x Sb with x  = 0.03 and х  = 0.06 at hydrostatic pressure up to 7 GPa and room temperatures. We found that a magnitude of negative MR is strongly depends from application of pressure, magnetic field and chemical composition. Only in a low magnetic field of H ∼1 kOe we observed a weak positive MR that changes its sign with increase in pressure or magnetic field. The behavior of negative MR is closely linked with the magnetic inclusions in the studied samples, as it evident from analysis of composition and distribution of elements on the surface.