CIGS hexagonal plate structure grown by hydride vapor transport method

CuInGaSe(CIGS) mixed‐source was prepared by hydride vapor transport method (HVT). The new source synthesis method was attempted by mixing several metals such as Cu, In, Ga and Se with 3:5:1:4 mass ratios. This mixed‐source was soaked at 1090 °C for 90 minutes in nitrogen atmosphere. After grinding the mixed‐source to powder, the shape of pellet was made by casting. The horizontal type HVT system was used for the growth of CIGS layer. The HCl gas was flowed over CIGS source and its flow rate was 60 sccm. The temperature of source zone and growth zone were 650 °C and 750 °C, respectively. The growth time was about 4 hours. The EDS result shows that the composition of the Cu, In, Ga, and Se were 8.64 %, 5.62 %, 11.81 %, and 73.93 %, respectively. We suggest that the newly fabrication method of CIGS compound semiconductor for solar cell device was prepared by HVT method.