Improvement in electrical properties of SOI-SIMNI films by multiple-step implantation

Abstract Silicon on insulator-separation by implantation of nitrogen (SOI-SIMNI) films were formed by standard and multiple-step implantation methods. The Hall-effect measurements (4–400 K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standard SIMNI films. The deep level transient spectra (DLTS) results indicated that there is a deep level defect E t =0.152 eV in the surface silicon layers of standard SIMNI films and no deep level defects in the multiple-step implanted SIMNI films.