A SILICON SURFACE BARRIER MICROSTRIP DETECTOR DESIGNED FOR HIGH-ENERGY PHYSICS
1980
Abstract A silicon microstrip detector was manufactured using the surface barrier technique. It has 100 strips at 200 μm pitch and it is 400 μm thick. To each strip a fast current sensitive preamplifier is connected so that minimum ionizing particles can be detected on single strips. The signals have a duration of 40 ns and are processed using standard equipment. A description is given of the results which were obtained in two high energy particle beams at CERN.
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