Inductor modeling with layout-dependent effects in 40nm CMOS process

Layout-dependent effects (LDE) as they are encountered in modern semiconductor technology processes are addressed and considered in this work. In particular, their effect on inductor modeling is discussed based on experimental results of devices fabricated and characterized in a 40 nm technology process. The proposed vector based modeling approach is accounting for these effects and its validity is demonstrated by comparison to experimental data. Improved correlation to measured inductor metrics such as inductance L and quality factor Q is demonstrated by considering the layout-dependent effects.