GaN-Based Light-Emitting Diodes With Step Graded-Refractive Index (ZnO) x (SiO 2 ) 1- x Micropillar Array

Step graded-refractive index (SGRI) (ZnO)x(SiO2)1-x micropillar multilayers have been introduced and demonstrated on GaN-based LEDs combined with the mesh ITO. The SGRI (ZnO)x(SiO2)1-x micropillars were produced by controlling the Zn/Zn+Si ratio of co-sputtered ZnO and SiO2. The introduced three-layered SGRI (ZnO)x(SiO2)1-x micropillars improved both critical angle inside GaN LEDs and Fresnel transmittance coefficient (ηFr) as well as had better light coupling into the micropillars. Moreover, a high number of layers of the SGRI micropillars would aid the light coupled in the pillars to escape from the side wall of the pillar. LEDs with three-layered SGRI (ZnO)x(SiO2)1-x micropillars exhibited output power enhancements of 12.2% with a 20 mA Vf of 3.19 V. The output power of the mesh ITO LEDs with SGRI (ZnO)x(SiO2)1-x micropillars was further enhanced to 15.3% by improving the current spreading.