Comparison of source/drain electrodes in thin-film transistors based on room temperature deposited zinc nitride films

Abstract In this work, the comparison of source/drain electrodes in thin film transistors (TFTs) based on room temperature deposited Zinc Nitride (Zn 3 N 2 ) films is presented. Aluminum and aluminum doped zinc oxide (AZO) films are used as electrodes. Both devices exhibit an on/off-current ratio of 10 4 and a subthreshold slope close to 1 V/Dec. The extracted field-effect mobility was 4.5 cm 2 /Vs and 1 cm 2 /Vs for TFTs using aluminum and AZO, respectively. Better electrical characteristics are achieved with aluminum electrodes. However, AZO electrodes made possible the fabrication of fully transparent Zn 3 N 2 TFTs, reported for first time in this work.