Low-temperature growth of polycrystalline SiC by catalytic CVD from monomethylsilane

Microcrystalline silicon carbide (@mc-SiC) has several applications, such as solar cells, light-emitting diodes and as optical coating for solar cells. Hydrogenated amorphous silicon carbide (a-SiC:H) grows by plasma enhanced CVD, even under hydrogen diluted conditions. High concentration of atomic hydrogen from catalytic CVD could promote lower temperature growth of @mc-SiC under the same conditions as a-SiC:H without plasma. In the present study, @mc-SiC films have been successfully grown by catalytic CVD (hot-filament catalysis) from monomethylsilane and hydrogen on (100) silicon substrates maintained at 300^oC. The optimal chamber pressure is 1.0Torr and the optimal concentration of monomethylsilane in the hydrogen carrier gas is 1%. FTIR spectra of films obtained under these conditions show strong Si-C peaks.