Low-temperature Silver Sintering for Bonding 3D Power Modules
2019
We developed silver sintering materials for die-attaching power semiconductor devices at temperatures down to 190oC without pressure and applied the materials for bonding low-profile, double-side cooled, and high-temperature power modules of Si IGBT, SiC MOSFET, and GaN HEMT in automotive, aerospace, and power-grid applications.
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