Influence of rare earth doping concentrations on properties of spin coated V2O5 thin films and Cu/V2O5/n-Si Schottky barrier diodes

Abstract In the present work, Nd(x)-V2O5-nanorods (x = 2, 4 and 6 wt. %) thin films were prepared via a spin coating technique. X-ray diffraction analysis shows tetragonal phases for neodymium substituted films. The concern diffraction angle shifted to higher angle owing to substitution in vanadium that implies complete occupation in V2O5 crystal lattice. FE-SEM images are flaunting one dimensional nano-rod formation. Conductivity analysis of fabricated diode at different temperature reveals their activation energies (Ea) and these energies are high when rare earth interfaced diode in contrast to pure vanadium films. The essential current (I) and voltage (V) characteristics of junction diodes express nonlinear behaviour. The photodiode parameters like n, ФB, I0, Ps, R, QE and D* are calculated by dark and light condition. The photodiode performance under lighting condition is superior than dark.