A process for the manufacture of complementary bipolar transistors with SiGe base regions

A process for the manufacture of complementary bipolar transistors with SiGe base regions, in which - a first collector region (20) and a second collector region (14) adjacent each formed from a silicon epitaxial layer on a wafer (10); - via the first and second collector region (20, 14) has a through silicon dioxide layer (28) and over the silicon dioxide layer (28) is deposited a polycrystalline silicon layer (30) and then to the first collector region (20), the polycrystalline silicon layer (30) and the silicon dioxide layer (28) are removed; - in a first step, a SiGe mixed with germanium silicon layer is deposited crystalline, so that on the first collector region (20) creates a first crystalline SiGe layer (32a) having a first germanium profile; • wherein the first SiGe step of the crystalline deposition of the offset with germanium silicon layer is carried out so that a continuous layer of silicon which is added with germanium is deposited crystalline, so that on the epitaxial silicon layer on the first collector region (20), the first crystalline SiGe Layer...