Large area mold fabrication for the nanoimprint lithography using electron beam lithography

The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist.