Reliability studies of barrier layers for Cu/PAE low-k interconnects

Abstract Electromigration and electrical breakdown are two of the most important concerns in the reliability of modern electronic devices. The electromigration lifetimes and electrical breakdown field ( E BD ) in single damascene copper lines/porous polyarylene ether (PAE) dielectric with different diffusion barrier materials (i.e., amorphous-SiC:H and TaN/Ta) were studied. The results showed a “wafer edge effect” in both groups of samples. The electromigration lifetime of samples taken from the center of the wafer is five to nine times longer of those taken from the wafer edge in the accelerated test. The samples from wafer edge showed a bi-modal failure characteristic. It was also found that electromigration resistance of the structure with new diffusion barrier a-SiC:H/Ta was comparable to that with the conventional TaN/Ta. On the other hand, the electrical testing showed that E BD of the a-SiC:H/Ta structure is about twice of that with TaN/Ta barrier, indicating a significant improvement of the electrical performance.