Ultrathin InAs-channel MOSFETs on Si substrates

Planar ultrathin InAs-channel MOSFETs were demonstrated on Si substrates with gate lengths (L g ) as small as 20 nm. The III-V epitaxial buffer layers were grown on 300 mm Si substrates by metal-organic chemical vapor deposition (MOCVD) and the subsequent InAlAs bottom barriers and InAs channel were grown by molecular beam epitaxy (MBE). The devices at 20 nm L g show high transconductance, ∼2.0 mS/μm at V DS =0.5V.