Gradual change of resistance on high current density induced by nano-scaled voids in the crystalline phase of Ge 2 Sb 2 Te 5

Electrical failure is first observed in crystalline Ge 2 Sb 2 Te 5 , which indicates phase change memory can be failed in the crystalline phase especially non-active region. Resistance of Ge 2 Sb 2 Te 5 increase gradually during current stressing, which can be explained by nano void generation quantitatively. In this study, we investigate the origin of the crystalline failure in Ge 2 Sb 2 Te 5 induced by electrical current to identify the mechanism of degradation.